Name: Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al0.27Ga0.73N/Gan High Electron Mobility Transistor (en Inglés)
Price: 67.65 USD
Availability: InStock
Author: Jarzen, Thomas D.
ISBN: 9781288405893

portada Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al0.27Ga0.73N/Gan High Electron Mobility Transistor (en Inglés)

Formato

Libro Físico

Autor

Thomas D. Jarzen

Editorial

Biblioscholar

Idioma

Inglés

N° páginas

146

Encuadernación

Tapa Blanda

Dimensiones

24.6 x 18.9 x 0.8 cm

Peso

0.27 kg.

ISBN13

9781288405893

Categorías

Educación

Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al0.27Ga0.73N/Gan High Electron Mobility Transistor (en Inglés)

Thomas D. Jarzen (Autor) · Biblioscholar · Tapa Blanda

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Origen: Estados Unidos (Costos de importación incluídos en el precio)

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Reseña del libro "Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al0.27Ga0.73N/Gan High Electron Mobility Transistor (en Inglés)"

The effects of radiation on semiconductors are extremely important to the Department of Defense since the majority of the defense informational, navigational and communications systems are now satellite-based. Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key components in a multitude of military satellite-based systems is highly probable. AlxGa1-xN/GaN HEMTs were irradiated at low temperature ( 80 K) by 0.45 - 0.8 MeV electrons up to fluences of 1 1015 e-/cm2. Following irradiation, low temperature capacitance-voltage measurements were recorded providing fluence-dependent measurements; additionally low-temperature post-irradiation capacitance-voltage measurements were recorded at twenty-four hour intervals up to 168 hours in order to investigate the room temperature annealing process. Using previously irradiated devices, the effects of a 9 month room temperature anneal were also considered. Capacitance-voltage measurements indicate that low energy electron radiation results in an increase in the transistor channel drain current.